Ukuqalisa
Ubuchwepheshe bamandla yitshe le-Cornterstone lamadivayisi wanamuhla kagesi, futhi njengobuchwepheshe bentuthuko, isidingo sokusebenza kohlelo lwamandla athuthukisiwe luyaqhubeka ukukhuphuka. Kulesi simo, ukukhethwa kwezinto zokwenziwa ze-semiconductor kuba ngcono. Ngenkathi ama-semiconductors endabuko (SI) ama-semiconductors asetshenziswa kabanzi, izinto ezivelayo ezinjenge-Gallium NITride (GAN) kanye ne-Silicon Carbide (Sic) ziya ngokuya zivelela ubuchwepheshe bukabuchwepheshe obuphezulu. Le ndatshana izohlola umehluko phakathi kwalezi zinto ezintathu kubuchwepheshe bamandla, izimo zohlelo lokusebenza, kanye nezindlela zemakethe zamanje ukuze ziqonde ukuthi kungani uGan ne-Sic ziqala ngokubalulekile ezinhlelweni zamandla ezizayo.
1. I-Silicon (SI) - Indwangu ye-semiconductor yendabuko
1.1 Izici nezinzuzo
I-Silicon iyinto yokuphayona impahla ensimini yama-semiconductor, enamashumi eminyaka ofaka isicelo embonini ye-elekthronikhi. Amadivayisi asuselwa e-SI afaka izinqubo zokukhiqiza ezivuthiwe kanye nesizinda sohlelo lokusebenza esibanzi, enikeza izinzuzo njengezindleko eziphansi kanye ne-chain esungulwe kahle. Amadivayisi we-Silicon abonisa ukuqina kukagesi okuhle, okwenza balungele izinhlelo ezahlukahlukene ze-Power Electronics, ezivela ku-elekthronikhi yabathengi eliphansi ezinhlelweni zamandla ezimboni.
1.2 Ukulinganiselwa
Kodwa-ke, njengoba isidingo sokusebenza kahle nokusebenza kwama-Power Systems sikhula, ukulinganiselwa kwamadivayisi we-silicon kube sobala. Okokuqala, uSilicon wenza kabi ngaphansi imvamisa ephezulu kanye nezimo zokushisa okuphezulu, okuholela ekulahlekelweni kwamandla okukhuphukayo nokunciphisa ukusebenza kahle kohlelo. Ngokwengeziwe, ukuvumelanisa okuphansi kweSilicon kwenza ukuphathwa kwe-thermal kube yinselele kuzinhlelo zokusebenza zamandla aphezulu, okuthinta ukuthembeka kohlelo kanye nesikhathi sokuphila.
1.3 Izindawo zohlelo lokusebenza
Ngaphandle kwalezi zinselelo, amadivaysi e-silicon ahlala enamandla kuzinhlelo zokusebenza eziningi zendabuko, ikakhulukazi kwizinhlelo zokusebenza zabathengi ezibucayi kanye nezicelo eziphansi eziphakathi nendawo ezifana nabaguquli be-AC-DC, izinto zasendlini, kanye namadivayisi wekhompyutha, kanye namadivayisi wekhompyutha uqobo.
2. Gallium nitride (gan) - into evelayo yokusebenza okuphezulu
2.1 Izici nezinzuzo
IGallium NITride iyi-bandgap ebanzisemiconductorIzinto eziphawulwa yinkambu yokuqhekeka ephezulu, ukuhamba okuphezulu kwe-elekthron, kanye nokumelana kakhulu. Uma kuqhathaniswa ne-silicon, amadivaysi e-GAN angasebenza ngamaza aphezulu, anciphise kakhulu usayizi wezakhi ezingenamandla kumandla anika amandla kanye nokwandisa ubuningi bamandla. Ngaphezu kwalokho, amadivaysi e-GAN angathuthukisa kakhulu ukusebenza kahle kwamandla aphezulu ngenxa yokutholwa kwawo okuphansi kanye nokushintsha okungcono, ikakhulukazi kuma-messiven augh-Power Power.
2.2 Ukulinganiselwa
Naphezu kwezinzuzo ezibalulekile zokusebenza kwe-GAN, izindleko zayo zokukhiqiza zihlala ziphezulu, zinciphisa ukusetshenziswa kwazo kwezicelo eziphezulu lapho kusebenza kahle nosayizi kubalulekile. Ngaphezu kwalokho, ubuchwepheshe be-Gan busesigabeni sokuqala sentuthuko, ngokwethembeka isikhathi eside nokuvuthwa kokukhiqizwa kwabantu abaningi kudinga ukuqinisekiswa okwengeziwe.
2.3 Izindawo zesicelo
Amadivayisi we-GAN 'afinyelela kufriji ephezulu kanye nezimpawu eziphakeme ezisebenza kahle ziholele ekutholeni kwazo emasimini amaningi avelayo, kufaka phakathi amashaja asheshayo, ama-5G Ukuxhumana Power Supplies, ne-AeRoSpace Electronics. Njengoba kuthuthukiswa ubuchwepheshe kanye nezindleko zehla, i-GAN kulindeleke ukuthi idlale indima ebonakalayo ezinhlelweni ezibanzi zohlelo lokusebenza.
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3.1 Izici nezinzuzo
I-Silicon Carbide kungenye into ebanzi ye-tendgap semiconductor ngensimu yokuqhekeka okuphakeme kakhulu, ukuqhutshwa okushisayo, kanye ne-electron saturation velocity kune-silicon. Amadivayisi we-SIC agqamile kuma-vol-voltage kanye nezinhlelo zokusebenza eziphakeme, ikakhulukazi ezimotweni zikagesi (evs) kanye nabakwa-Inverters bezimboni. Ukubekezelelana kwamandla kagesi aphezulu kaSic kanye nokulahleka okuphansi kokushintsha kwenza kube yisinqumo esihle sokuguqulwa kwamandla okusebenzayo kanye nokwenza amandla okubucayi kwamandla.
3.2 Ukulinganiselwa
Ifana ne-GAN, amadivaysi e-SIC ayabiza ukukhiqiza, ngezinqubo eziyinkimbinkimbi zokukhiqiza. Lokhu kukhawulela ukusetshenziswa kwazo kuzinhlelo zokusebenza eziphezulu ezifana nezinhlelo zamandla ze-EV, amasistimu wamandla avuselelekayo, ama-inverters aphezulu, kanye nemishini yegridi ehlakaniphile.
3.3 Izindawo zesicelo
Izici ezisebenza kahle zika-Sic, eziphakeme zenza ukuthi kusetshenziswe kabanzi kumadivayisi we-Power Electronics asebenza emandleni aphezulu, izindawo eziphakeme zokushisa, ezifana ne-ev inverters nama-inverger aphezulu, ama-invergen aphezulu elanga, amasistimu wamandla omoya, nokuningi. Njengoba ukufunwa kwemakethe kukhula kanye nobuchwepheshe kuthuthuka, ukusetshenziswa kwamadivayisi we-SIC kulezi zinkambu kuzoqhubeka ukunweba.
4. Ukuhlaziywa Kwemakethe Yemakethe
4.1 ukukhula okusheshayo kwezimakethe ze-gan kanye ne-sic
Njengamanje, imakethe yobuchwepheshe bamandla iguqulwa, kancane kancane isuka kumadivayisi we-silicon wendabuko ukuze amadivayisi we-gan nama-snic. Ngokusho kwemibiko yocwaningo lwemakethe, imakethe yamadivayisi we-GAN ne-SIC iyakhula ngokushesha futhi kulindeleke ukuthi iqhubeke nokukhula kwayo okuphezulu kwe-trajectory eminyakeni ezayo. Lo mkhuba uqhutshwa ngokuyinhloko yizici eziningana:
- ** Ukukhuphuka kwezimoto zikagesi **: Njengoba imakethe ye-EV inwebeka ngokushesha, isidingo sokusebenza kahle, ama-semiconductures aphezulu akhula kakhulu. Amadivaysi e-SIC, ngenxa yokusebenza kwawo okuphezulu ezincelweni eziphakeme ze-voltage, ziye zaba yikhethelo elikhethwayo leIzinhlelo zamandla ze-EV.
- ** Ukuthuthukiswa Kwamandla okuvuselelayo Amadivayisi we-SIC, ngokusebenza kwawo okuphezulu nokuthembela, asetshenziswa kabanzi kulezi zinhlelo.
- ** Ukuthuthukisa i-elekthronikhi yabathengi **: Njengoba ama-elekthronikhi abathengi anjengama-smartphones kanye nama-laptops avela ekusebenzeni okuphezulu kanye nempilo yebhethri ende, amadivaysi e-GAN
4.2 Kungani ukhethe uGan noSic
Ukunakwa okwandile kuGan kanye ne-Sic iziqu ngokuyinhloko kusuka ekusebenzeni kwazo okuphezulu ngaphezulu kwamadivayisi we-silicon kwizicelo ezithile.
- ** Ukusebenza Okuphezulu Okuphezulu Lokhu kubaluleke kakhulu ezimotweni zikagesi, amandla avuselelekayo, kanye ne-elekthronikhi yabathengi ephezulu.
- ** Usayizi omncane ** Lokhu kubalulekile ukuthola izinhlelo zokusebenza ezidinga ukukhiqizwa okuncane kanye nemiklamo engasindi, efana ne-elekthronikhi yabathengi kanye nemishini ye-aerospace.
- ** Ukuthembela okwandayo **
5. Isiphetho
Ekuziphendukeleni kobuchwepheshe bamandla wanamuhla, ukukhethwa kwezinto ze-semiconductor zithinta ngqo ukusebenza kohlelo kanye namathuba okusebenza. Ngenkathi i-silicon isabusa imakethe yezicelo zamandla endabuko, ubuchwepheshe be-gan kanye ne-spic kushesha ukuba yizinketho ezifanele zokusebenza kahle, okuphezulu, nezinhlelo zamandla aphezulu eziphezulu njengoba zivuthwa.
UGan ungena ngokushesha umthengiAma-ElectronicsFuthi imikhakha yezokuxhumana ngenxa yezimpawu zayo eziphakeme kanye nezimpawu eziphakeme kakhulu, ngenkathi i-SIC, ngezinzuzo zayo ezihlukile kumandla kagesi aphezulu, izicelo ezinamandla aphezulu, ziba yinto ebalulekile ezimotweni zikagesi nezinhlelo zamandla avuselelekayo. Njengoba izindleko zincipha kanye nentuthuko yezobuchwepheshe, i-gan ne-spic kulindeleke ukuthi zithathe amadivaysi e-silicon esikhundleni sohlu olubanzi lwezinhlelo zokusebenza, ukushayela ubuchwepheshe bamandla esigabeni esisha sentuthuko.
Lokhu kuguqulwa kuholwa yiGan ne-Sic ngeke kuguqule kuphela indlela amasistimu kagesi aklanywe ngayo kodwa futhi nomthelela omkhulu wezimboni eziningi, kusuka kuma-elekthronikhi wabathengi ekuphathweni kwamandla, ukuwacindezela ekuphathweni okuphezulu kanye nezikhombisi-ndlela ezinobungane ngokwengeziwe.
Isikhathi sePosi: Aug-28-2024