Isingeniso
Ubuchwepheshe bamandla buyisisekelo semishini yesimanje kagesi, futhi njengoba ubuchwepheshe buthuthuka, isidingo sokusebenza kwesistimu yamandla esithuthukisiwe siyaqhubeka sikhuphuka. Kulesi simo, ukukhetha kwezinto zokwakha ze-semiconductor kubaluleka. Nakuba ama-semiconductors e-silicon (Si) endabuko asasetshenziswa kabanzi, izinto ezisafufusa ezifana ne-Gallium Nitride (GaN) ne-Silicon Carbide (SiC) ziya ngokuya zithola ukuvelela kubuchwepheshe bamandla obusebenza kakhulu. Lesi sihloko sizohlola umehluko phakathi kwalezi zinto ezintathu kubuchwepheshe bamandla, izimo zokusebenza kwazo, namathrendi amanje emakethe ukuze kuqondwe ukuthi kungani i-GaN ne-SiC iba ibalulekile ezinhlelweni zamandla zesikhathi esizayo.
1. I-Silicon (Si) - I-Traditional Power Semiconductor Material
1.1 Izimpawu Nezinzuzo
I-Silicon iyimpahla yokuqala emkhakheni we-semiconductor yamandla, namashumi eminyaka okusetshenziswa embonini ye-electronics. Amadivayisi asekelwe ku-Si afaka izinqubo zokukhiqiza ezikhulile kanye nesisekelo sohlelo lokusebenza esibanzi, esinikeza izinzuzo ezifana nezindleko eziphansi kanye nochungechunge lokuhlinzeka olusungulwe kahle. Amadivaysi e-silicon abonisa ukuhamba kahle kukagesi, okuwenza afanelekele izinhlelo zokusebenza ze-elekthronikhi zamandla ahlukahlukene, kusukela kugesi wabathengi abanamandla aphansi kuya ezinhlelweni zezimboni ezinamandla amakhulu.
1.2 Imikhawulo
Kodwa-ke, njengoba isidingo sokusebenza kahle okuphezulu nokusebenza ezinhlelweni zamandla sikhula, ukulinganiselwa kwamadivayisi we-silicon kuba sobala. Okokuqala, i-silicon ayisebenzi kahle ngaphansi kwezimo ze-high-frequency kanye nezinga lokushisa eliphezulu, okuholela ekwenyukeni kokulahlekelwa kwamandla kanye nokunciphisa ukusebenza kahle kwesistimu. Ukwengeza, ukuhanjiswa kwe-silicon okuphansi kwe-thermal kwenza ukuphatha okushisayo kube inselele ezinhlelweni zamandla aphezulu, kuthinte ukuthembeka kwesistimu nempilo yokuphila.
1.3 Izindawo zokufaka izicelo
Naphezu kwalezi zinselelo, amadivaysi e-silicon ahlala ebusa ezinhlelweni eziningi zendabuko, ikakhulukazi ku-elekthronikhi yabathengi engabizi kakhulu kanye nezinhlelo zokusebenza zamandla aphansi kuya maphakathi njengeziguquli ze-AC-DC, iziguquli ze-DC-DC, izinto zikagesi zasendlini, kanye nemishini yekhompyutha yomuntu siqu.
2. I-Gallium Nitride (GaN) - Impahla Evelayo Yokusebenza Okuphezulu
2.1 Izimpawu Nezinzuzo
I-Gallium Nitride iyi-bandgap ebanzii-semiconductorimpahla ebonakala ngenkundla yokuwohloka okuphezulu, ukuhamba kwe-electron ephezulu, nokumelana okuphansi. Uma kuqhathaniswa ne-silicon, amadivaysi e-GaN angasebenza ngamaza aphezulu, ehlisa kakhulu usayizi wezingxenye ezingenzi lutho kumandla kagesi nokwandisa ukuminyana kwamandla. Ngaphezu kwalokho, amadivaysi e-GaN angathuthukisa kakhulu ukusebenza kahle kwesistimu yamandla ngenxa yokulahleka kwawo kokusebenza okuphansi kanye nokulahlekelwa kokushintsha, ikakhulukazi kumandla aphakathi nendawo ukuya kwaphansi, izinhlelo zokusebenza zefrikhwensi ephezulu.
2.2 Imikhawulo
Naphezu kwezinzuzo ezibalulekile zokusebenza kwe-GaN, izindleko zayo zokukhiqiza zihlala ziphezulu uma kuqhathaniswa, zikhawulela ukusetshenziswa kwayo ezinhlelweni eziphezulu lapho ukusebenza kahle nosayizi kubalulekile. Ukwengeza, ubuchwepheshe be-GaN busesesigabeni sokuqala sokuthuthuka, nokuthembeka kwesikhathi eside kanye nokuvuthwa kokukhiqizwa ngobuningi okudinga ukuqinisekiswa okwengeziwe.
2.3 Izindawo zokufaka izicelo
Izici ze-GaN ze-high-frequency nezici ezisebenza kahle kakhulu ziholele ekuthathweni kwazo emikhakheni eminingi esafufusa, okuhlanganisa amashaja asheshayo, izinsiza zamandla zokuxhumana ze-5G, iziguquli ezisebenza kahle, kanye nogesi we-aerospace. Njengoba ubuchwepheshe buthuthuka nezindleko zincipha, i-GaN ilindeleke ukuthi idlale indima egqame kakhulu kuhlu olubanzi lwezinhlelo zokusebenza.
3. I-Silicon Carbide (SiC) — Impahla Ekhethwayo Yezicelo Ze-Voltge High
3.1 Izimpawu Nezinzuzo
I-Silicon Carbide ingenye impahla ebanzi ye-bandgap semiconductor enenkambu yokuphuka ephakeme kakhulu, ukuqhutshwa kwe-thermal, kanye nesivinini sokugcwala kwe-electron kune-silicon. Amadivaysi e-SiC ahamba phambili ku-high-voltage kanye nezicelo zamandla aphezulu, ikakhulukazi ezimotweni zikagesi (EVs) kanye nama-inverters ezimbonini. Ukubekezelela amandla kagesi aphezulu kwe-SiC nokulahlekelwa kokushintshwa okuphansi kuyenza ibe inketho efanelekile yokuguqulwa kwamandla okusebenzayo kanye nokwenza kahle kokuminyana kwamandla.
3.2 Imikhawulo
Ngokufana ne-GaN, amadivaysi e-SiC ayabiza ukuwenza, anezinqubo zokukhiqiza eziyinkimbinkimbi. Lokhu kunciphisa ukusetshenziswa kwazo ezinhlelweni zenani eliphezulu ezifana nezinhlelo zamandla e-EV, izinhlelo zamandla avuselelekayo, iziguquli zamandla kagesi aphezulu, kanye nemishini yegridi ehlakaniphile.
3.3 Izindawo zokufaka izicelo
Izici ze-SiC ezisebenza kahle, ezine-voltage ephezulu ziyenza isebenze kakhulu kumadivayisi kagesi kagesi asebenza ezindaweni ezinamandla kakhulu, ezinethempelesha eliphezulu, njengeziguquli ze-EV namashaja, iziguquli zelanga ezinamandla amakhulu, izinhlelo zamandla omoya, nokunye. Njengoba isidingo semakethe sikhula futhi ubuchwepheshe buthuthuka, ukusetshenziswa kwamadivayisi we-SiC kule mikhakha kuzoqhubeka nokukhula.
4. Ukuhlaziywa Kwethrendi Yezimakethe
4.1 Ukukhula Okusheshayo Kwezimakethe ze-GaN kanye ne-SiC
Njengamanje, imakethe yobuchwepheshe bamandla ibhekene nezinguquko, kancane kancane isuka kumadivayisi we-silicon yendabuko iye kumadivayisi we-GaN kanye ne-SiC. Ngokwemibiko yocwaningo lwemakethe, imakethe yamadivayisi we-GaN kanye ne-SiC ikhula ngokushesha futhi kulindeleke ukuthi iqhubeke nomkhondo wayo wokukhula okuphezulu eminyakeni ezayo. Lo mkhuba uqhutshwa ngokuyinhloko izinto ezimbalwa:
- **Ukunyuka Kwezimoto zikagesi**: Njengoba imakethe ye-EV ikhula ngokushesha, isidingo sama-semiconductors asebenza kahle kakhulu, anamandla kagesi aphezulu sikhula kakhulu. Amadivayisi we-SiC, ngenxa yokusebenza kwawo okuphezulu ezinhlelweni ze-voltage ephezulu, abe yinketho ekhethwayoAmasistimu wamandla we-EV.
- **Ukuthuthukiswa Kwamandla Avuselelekayo**: Izinhlelo zokuphehla amandla avuselelekayo, njengamandla elanga nomoya, zidinga ubuchwepheshe bokuguqula amandla obusebenzayo. Amadivayisi we-SiC, ngokusebenza kwawo okuphezulu nokuthembeka, asetshenziswa kabanzi kulezi zinhlelo.
- **Ukuthuthukisa I-Consumer Electronics**: Njengoba izinto zikagesi zabathengi njengama-smartphone namakhompyutha aphathekayo ziguqukela ekusebenzeni okuphakeme nempilo yebhethri ende, amadivayisi we-GaN aya ngokuya asetshenziswa kumashaja asheshayo nama-adaptha kagesi ngenxa yezimpawu zawo zokuvama okuphezulu nezici ezisebenza kahle kakhulu.
4.2 Kungani Khetha i-GaN ne-SiC
Ukunaka okusabalele ku-GaN ne-SiC kubangelwa ngokuyinhloko ekusebenzeni kwabo okuphezulu kumadivayisi we-silicon ezinhlelweni ezithile.
- **Isebenza Kahle Kakhulu**: Imishini ye-GaN ne-SiC ihamba phambili ekusetshenzisweni kwemvamisa ephezulu kanye ne-high-voltage, kunciphisa kakhulu ukulahleka kwamandla futhi ithuthukisa ukusebenza kahle kwesistimu. Lokhu kubaluleke kakhulu ezimotweni zikagesi, amandla avuselelekayo, kanye nama-elekthronikhi omthengi asebenza kahle.
- **Usayizi Omncane**: Ngenxa yokuthi amadivayisi we-GaN ne-SiC angasebenza kumafrikhwensi aphezulu, abaklami bamandla banganciphisa usayizi wezingxenye ze-passive, ngaleyo ndlela banciphise usayizi wesistimu yamandla iyonke. Lokhu kubalulekile ezinhlelweni ezidinga ukwenziwa kwe-miniaturization kanye nemiklamo engasindi, efana ne-electronics yabathengi kanye nemishini yasemkhathini.
- **Ukwethenjelwa Okunyukile**: Amadivayisi e-SiC abonisa ukuzinza okukhethekile okushisayo nokwethembeka endaweni enezinga lokushisa eliphezulu, enevoltheji ephezulu, ehlisa isidingo sokupholisa kwangaphandle nokwelula ubude besikhathi sedivayisi.
5. Isiphetho
Ekuthuthukisweni kobuchwepheshe bamandla besimanje, ukukhethwa kwezinto ezibonakalayo ze-semiconductor kuthinta ngokuqondile ukusebenza kwesistimu namandla okusebenza. Ngenkathi i-silicon isabusa imakethe yezicelo zamandla endabuko, ubuchwepheshe be-GaN kanye ne-SiC buya ngokushesha baba ukukhetha okuhle kwezinhlelo zamandla ezisebenza kahle, ezisondelene kakhulu, nathembeke kakhulu njengoba zikhula.
I-GaN ingena ngokushesha kumthengielectronicskanye nemikhakha yezokuxhumana ngenxa yezimpawu zayo eziphakeme-imvamisa kanye nekhono eliphezulu, kuyilapho i-SiC, enezinzuzo eziyingqayizivele ku-high-voltage, izicelo zamandla aphezulu, iba yinto ebalulekile ezimotweni zikagesi kanye nezinhlelo zamandla avuselelekayo. Njengoba izindleko zincipha kanye nokuthuthuka kobuchwepheshe, i-GaN ne-SiC kulindeleke ukuthi ithathe indawo yemishini ye-silicon ezinhlobonhlobo zezinhlelo zokusebenza, iqhube ubuchwepheshe bamandla bungene esigabeni esisha sokuthuthuka.
Lokhu kuguquguquka okuholwa yi-GaN kanye ne-SiC ngeke nje kuguqule indlela amasistimu kagesi aklanywa ngayo kodwa futhi kuzoba nomthelela omkhulu ezimbonini eziningi, kusukela kubathengi bama-electronics kuya ekuphathweni kwamandla, kuziphushele ekusebenzeni okuphakeme kanye nezikhombisi-ndlela ezivumelana nemvelo.
Isikhathi sokuthumela: Aug-28-2024