Ngokukhula okukhulu kwamandla ekhompyutha ye-AI, izikhungo zedatha zibhekene nengcindezi yokuthuthukisa engakaze ibonwe. Njengoba "inhliziyo yamandla" yamaseva e-AI, umklamo wokunikezwa kwamandla we-AC-DC ubhekene nezinselele ezingakaze zibonwe ngaphambili: ungafinyelela kanjani ukuminyana kwamandla okuphezulu, isikhathi eside sokuphila, kanye nokuthembeka okuqinile ngaphakathi kwesikhala esilinganiselwe? Lokhu akuyona nje inkinga yobuchwepheshe, kodwa futhi kubalulekile ekuqinisekiseni ukukhishwa okuqhubekayo nokuzinzile kwamandla ekhompyutha ye-AI.
I-YMIN Electronics, umhlinzeki ohamba phambili wezixazululo ze-capacitor zasekhaya onolwazi oluningi emkhakheni we-capacitor enamandla aphezulu, wethule uchungechunge lwe-IDC3 lwama-capacitor e-aluminium electrolytic asebenza ngamandla aphezulu ukuze abhekane nezidingo ezithile zamandla e-AI server, enikeza ikhambi lobuchwepheshe elisha lokuxazulula izinkinga embonini.
Izimo Zokusebenza
• Indawo: Isitoreji samandla/i-capacitor yesihlungi ngemuva kwe-AC-DC front-end PFC (Ukulungiswa Kwezici Zamandla) I-DC-Link (ibhasi le-DC) (isisombululo esijwayelekile)
• Amandla: 4.5kW–12kW+; Isici sefomu: Ukunikezwa kwamandla kweseva okufakwe ku-rack/ukunikezwa kwamandla amakhulu esikhungo sedatha
• Imvamisa: Njengoba ukusetshenziswa kwe-GaN (Gallium Nitride)/SiC (Silicon Carbide) kukhula, imvamisa yokushintsha ivame ukuba sebangeni elisukela kumashumi e-kHz kuya kumakhulu e-kHz (kuye ngokuthi iphrojekthi iyasebenza; lesi sihloko sicaphuna imininingwane efana ne-120kHz)
• Ukusebenza Nokushisa: Izikhungo zedatha zivame ukusebenza amahora angama-24 ngosuku, izinsuku eziyi-7 ngesonto; ugesi unokushisa okuphezulu kwangaphakathi, okudinga ukunakwa kokushisa kwe-capacitor/ukwehla kwempilo yonke (izimo zokusebenza ezivamile zokushisa okuphezulu)
Izinselele Ezintathu Ezinkulu: Ukwembula Inkinga Ye-High-Voltage Capacitor ku-AI Server Power Supply Design
Ekuklanyweni kwezingxenye ze-AC-DC zezinsiza zamandla zeseva ye-AI kanye nezinsiza zamandla eziyinhloko zesikhungo sedatha, onjiniyela ngokuvamile babhekene nezinselele ezintathu ezinkulu:
① Ukuphikisana phakathi kwesikhala nomthamo: Esikhaleni esivalekile seseva yokufaka i-rack engu-1U, ama-capacitor e-horn ajwayelekile ajwayelekile avame ukubhekana nenkinga yobukhulu obulinganiselwe. Ukufinyelela umthamo wokugcina amandla owanele ngaphakathi kokuphakama okulinganiselwe kuyinselele ebalulekile okumele inqotshwe lapho kuklanywa izinsiza zamandla ezinamandla aphezulu.
② Izinselele Zokuphila Ezindaweni Ezinokushisa Okuphezulu: Izindawo zegumbi leseva ye-AI ngokuvamile ziyizindawo ezinokushisa okuphezulu, okubeka ingcindezi enkulu ekuphathweni kokushisa kokunikezwa kwamandla. Ukusebenza kwe-capacitor engu-450V/1400μF ngaphansi kwenselele yokuphila kokushisa okuphezulu engu-105℃ kuthinta ngqo ukuthembeka kwesikhathi eside kohlelo.
③ Izidingo Zokusebenza Ngaphansi Komkhuba Wemvamisa Ephakeme: Njengoba kusetshenziswa kabanzi amadivayisi amasha kagesi njenge-GaN/SiC, imvamisa yokushintsha ukunikezwa kwamandla iyanda njalo, okubeka izidingo eziphezulu ku-ESR kanye nekhono lamanje le-ripple lama-capacitor ukugwema ingozi yokungasebenzi kwesikhathi sohlelo.
Ukuchaza Kabusha Imingcele Yokusebenza Yama-Capacitors Aphezulu Ngobuchwepheshe
Ukuze kuxazululwe izinselele okukhulunywe ngazo ngenhla, uchungechunge lwe-YMIN IDC3 lufinyelele impumelelo ephelele ngezindlela ezintathu: izinto zokwakha, isakhiwo, kanye nenqubo:
1. Ukuguquka Kobuningi: Ukwanda Komthamo okungu-70% ngaphakathi kwe-Φ30×70mm
Kusetshenziswa iphakheji encane ye-capacitor enomumo wophondo ongu-Φ30×70mm, umthamo ophezulu ongu-450V/1400μF ufinyelelwa ngaphakathi kwemingcele evamile yokuphakama kokunikezwa kwamandla kweseva ye-1U ejwayelekile. Uma kuqhathaniswa nemikhiqizo yendabuko enobukhulu obufanayo, umthamo ukhushulwa ngaphezu kuka-70% (uma kuqhathaniswa nobubanzi bomthamo obujwayelekile bama-capacitor anomumo wophondo ongu-450V asetshenziswa njalo embonini), okuxazulula ngempumelelo ukuphikisana phakathi kobuningi bomthamo ophezulu nendawo.
2. Ukuphumelela Kwesikhathi Sokuphila: Ukuqina Kuhlolwe ku-105℃
Ngokusebenzisa ukwakheka kwe-electrolyte okulungiselelwe kanye nesakhiwo se-anode foil, uchungechunge lwe-IDC3 lubonisa ukusebenza kahle kakhulu kokuphila komthwalo ngaphansi kwezimo ezinzima ezingu-105℃. Lo mklamo uvumela ama-capacitor ukuthi alondoloze ukuzinza kwesikhathi eside endaweni yokushisa ephezulu yezikhungo zedatha, okubhekana kalula nenselele yemboni yokuphila isikhathi esifushane ngenxa yokushisa okuphezulu.
3. Ukuzivumelanisa Nezimo Eziphezulu: Kwenzelwe i-GaN/SiC Era
Isebenzisa umklamo we-ESR ophansi, ingamelana nogesi ophezulu we-ripple ku-120kHz. Lesi sici sivumela uchungechunge lwe-IDC3 ukuthi luzivumelanise kangcono ne-topology yokushintsha imvamisa ephezulu ngokusekelwe ku-GaN (Gallium Nitride)/SiC (Silicon Carbide) (ngaphansi kwemininingwane yeshidi ledatha), okunikeza ukwesekwa okuqinile kokuthuthukisa ukusebenza kahle kwamandla aphezulu. Ngokungafani nokukhethwa kwe-capacitor yebhasi yendabuko egxile kakhulu ku-ripple evamise ukuba phansi, amandla aphezulu okusebenza kwamapulatifomu e-GaN/SiC adinga ukuqinisekiswa ngasikhathi sinye kwe-ESR kanye namakhono wamanje we-ripple evamise ukuba sezingeni eliphezulu ngaphansi kwemininingwane yeshidi ledatha.
Qaphela: Amapharamitha abalulekile kulesi sihloko avela ku-Uchungechunge lwe-YMIN IDC3ishidi ledatha/umbiko wokuhlola; ngaphandle uma kuchazwe ngenye indlela, i-ESR/i-ripple current ichazwa ngokwezincazelo zeshidi ledatha (isb., 120kHz), futhi inguqulo yakamuva yeshidi ledatha izosebenza.
Ukuqamba Okusha Ngokubambisana: Ukuthembeka Nokuqinisekiswa Kokusebenza Kusukela ku-4.5kW Kuya ku-12kW
I-YMIN igcina ukubambisana okujulile kwezobuchwepheshe nabakhiqizi be-semiconductor yamandla e-GaN abaphambili embonini njenge-Navitas (ngokusho kolwazi lomphakathi). Kumaphrojekthi okuphakelwa kwamandla eseva ye-AI asukela ku-4.5kW kuya ku-12kW kanye namazinga aphezulu amandla, ama-capacitor e-electrolytic e-aluminium acwebezelayo ochungechunge lwe-IDC3 abonise ukusebenza okuhle kakhulu.
Le modeli yokuthuthukisa ngokubambisana ayigcini nje ngokuqinisekisa ukuthembeka komkhiqizo kodwa futhi ihlinzeka ngesisekelo esiqinile sobuchwepheshe sokuthuthuka okuqhubekayo kwezinsiza zamandla zeseva ye-AI. Uchungechunge lwe-IDC3 lwe-YMIN selube yisisombululo esithandwayo samaphrojekthi amaningana eseva ye-AI ephezulu (ngokusho kolwazi lomphakathi), ngokusebenza okufana nemikhiqizo ehamba phambili yamazwe ngamazwe.
Okungaphezu Kwemikhiqizo Nje: Indlela i-YMIN Ehlinzeka Ngayo Izixazululo Zezinga Lesistimu Zamaseva E-AI
Esikhathini sokukhula okukhulu kwamandla ekhompyutha ye-AI, ukuthembeka kwezinhlelo zokuphakelwa kwamandla kubaluleke kakhulu. I-YMIN Electronics iyaqonda ngokujulile izidingo eziqinile zomklamo wokuphakelwa kwamandla eseva ye-AI futhi inikeza imboni ikhambi eliphelele elilinganisela ubuningi bamandla aphezulu, isikhathi eside sokuphila, kanye nokuthembeka okuphezulu ochungechungeni lwe-IDC3.
Okulandelayo kuyireferensi yokukhetha evamile yama-capacitor e-aluminium electrolytic asebenza ngogesi aphezulu e-IDC3 ochungechungeni lwe-IDC3 kumishini yamandla yeseva ye-AI, okukusiza ukuthi uhambisane ngokushesha nezidingo zesistimu:
Ithebula 1: Ama-Capacitor e-Liquid Snap-on e-IDC3 Series High-Voltage – Izincomo Zokukhetha
| Uhlobo lwe-Capacitor | Isimo | Uchungechunge | Impilo Yokushisa | I-Voltage Elinganisiwe (I-Voltage Ephakeme) | Amandla Okusebenza Okujwayelekile (μF) | Ubukhulu Bomkhiqizo ΦD*L (mm) | I-Tan (120Hz) | I-ESR (mΩ / 120kHz) | Isilinganiso Sokugeleza Kwe-Ripple (mA/120kHz) | Ukuvuza Kwamanje (mA) |
| I-Aluminium Electrolytic Capacitor (Uketshezi) | Uhlobo Lokuma Lwe-Substrate | I-IDC3 | 105°C, 3000H | 450 (ukwanda kwe-500V) | 1000 | 30 * 60 | 0.15 | 301 | 1960 | 940 |
| I-IDC3 | 105°C, 3000H | 450 (ukwanda kwe-500V) | 1200 | 30 * 65 | 0.15 | 252 | 2370 | 940 | ||
| I-IDC3 | 105°C, 3000H | 450 (ukwanda kwe-500V) | 1400 | 30 * 70 | 0.15 | 215 | 2750 | 940 | ||
| I-IDC3 | 105°C, 3000H | 450 (ukwanda kwe-500V) | 1600 | 30 * 80 | 0.15 | 188 | 3140 | 940 | ||
| I-IDC3 | 105°C, 3000H | 475 (ukwanda kwe-525V) | 1100 | 30 * 65 | 0.2 | 273 | 2360 | 940 | ||
| I-IDC3 | 105°C, 3000H | 500 (ukwanda kwe-550V) | 1300 | 30 * 75 | 0.2 | 261 | 3350 | 940 | ||
| I-IDC3 | 105°C, 3000H | 500 (ukwanda kwe-550V) | 1500 | 30 * 85 | 0.2 | 226 | 3750 | 940 | ||
| I-IDC3 | 105°C, 3000H | 500 (ukwanda kwe-550V) | 1700 | 30 * 95 | 0.2 | 199 | 4120 | 940 |
Ukusungula Izinto Ezintsha Akupheli: I-YMIN Iyaqhubeka Nokunikeza Amandla Azinzile Engqalasizinda Ye-AI
Esikhathini samandla okusebenzisa ikhompyutha, ukunikezwa kwamandla okuzinzile kubalulekile. I-YMIN Electronics, enama-capacitor ayo e-aluminium electrolytic asebenza ngogesi aphezulu e-IDC3 njengomgogodla, ihlinzeka njalo ngokusekelwa kwe-capacitor okuthembekile kwengqalasizinda yekhompyutha ye-AI. Asigcini nje ngokuhlinzeka ngemikhiqizo, kodwa futhi nezixazululo zezinga lesistimu ezisekelwe ekuqondeni okujulile kobuchwepheshe.
Uma uklama izinsiza zamandla zeseva ye-AI yesizukulwane esilandelayo, i-YMIN ikulungele ukukusiza ukuthi udlule imingcele yokuklama ngobuchwepheshe obusha futhi uhambisane ndawonye negagasi lamandla okusebenzisa ikhompyutha.
Isigaba Semibuzo Nezimpendulo
Q: Ama-capacitor e-YMIN e-IDC3 ochungechunge oluphezulu axazulula kanjani izindawo ezibuhlungu zezinsiza zamandla zeseva ye-AI?
A: Ama-capacitor e-aluminium electrolytic aqukethe uketshezi oluphezulu lwe-YMIN IDC3 anikeza izixazululo ezivela ezinhlangothini ezintathu:
① Umklamo wobukhulu obuphezulu – Ukufinyelela amandla aphezulu angu-450V/1400μF ngaphakathi kosayizi we-Φ30×70mm, ukwandisa amandla angaphezu kuka-70% uma kuqhathaniswa nemikhiqizo yobukhulu obufanayo, ukuxazulula ingxabano phakathi kwesikhala nomthamo;
② Isikhathi eside sokuphila esinokushisa okuphezulu – Isakhiwo se-electrolyte ne-anode esilungiselelwe sigcina isikhathi sokuphila somthwalo samahora angu-3000 ku-105℃, sithuthukisa ukuthembeka kohlelo lwesikhathi eside;
③ Ukuhambisana kwemvamisa ephezulu – Kusetshenziswa umklamo we-ESR ophansi, osekela ukusebenza kwemvamisa ephezulu engu-120kHz, kanye nomthamo we-ripple weseli elilodwa ophelele ongaba ngu-4.12A (500V/1700μF, 120kHz; 450V/1400μF cishe u-2.75A, bheka ithebula lokukhetha ekugcineni), okuhambisana ne-topology yemvamisa ephezulu ye-GaN/SiC, okusiza ukwakheka kwamandla aphezulu.
Isifinyezo ekugcineni kwedokhumenti
Izimo Ezisebenzayo: Ukunikezwa kwamandla kweseva ye-AI umklamo wangaphambili we-AC-DC, uhlelo lokunikezwa kwamandla oluyinhloko lwesikhungo sedatha, ukunikezwa kwamandla kweseva ye-rack-mount ephezulu ye-1U, ukunikezwa kwamandla okushintsha amaza aphezulu okusekelwe ku-GaN/SiC, ukunikezwa kwamandla aphezulu (4.5kW-12kW+) ukunikezwa kwamandla okubala e-AI
Izinzuzo Eziyinhloko:
① Ubukhulu: Ubuningi Besikhala, Incazelo: Ifinyelela ku-450V/1400μF ngaphakathi kosayizi we-Φ30×70mm, ngokukhushulwa komthamo okungaphezu kuka-70% uma kuqhathaniswa nosayizi ofanayo, okuhambisana nemikhawulo yokuphakama kweseva ye-1U.
② Ubukhulu: Isikhathi Sokuphila Sezinga Lokushisa Eliphezulu, Incazelo: Isikhathi sokuphila somthwalo esingaphezu kwamahora angu-3000 ku-105℃, esifanelekela izindawo zokusebenza ezinokushisa okuphezulu ezikhungweni zedatha.
③ Ubukhulu: Ukusebenza Okukhulu Kwemvamisa, Incazelo: Umklamo we-ESR ophansi, ungamelana nomswakama ophezulu we-ripple ku-120KHz high frequency, ovumelana nezimo ze-GaN/SiC high-frequency.
④ Ubukhulu: Ukuqinisekiswa Kwesistimu, Incazelo: Kusebenzisana nabakhiqizi abanjengoNavitas, abafanelekela amaphrojekthi okuphakelwa kwamandla eseva ye-AI engu-4.5kW kuya ku-12kW+.
Amamodeli Anconyiwe
| Uchungechunge | I-voltage | Umthamo | Ubukhulu | Isikhathi Sokuphila | Izici |
| I-IDC3 | 450V (ukuphakama okungu-500V) | 1400 μF | Φ30×70mm | 105℃/amahora angu-3000 | Ubuningi be-capacitance obuphezulu, obufanele ukwakhiwa kwamandla okujwayelekile kwe-1U |
| I-IDC3 | 500V (ukuphakama okungu-550V) | 1500 μF | Φ30×85mm | 105℃/amahora angu-3000 | Isilinganiso se-voltage ephezulu, esifanelekela ama-topology okunikezwa kwamandla aphezulu |
| I-IDC3 | 450V (ukuphakama okungu-500V) | 1000 – 1600 μF | Φ30×60 – 80mm | 105℃/amahora angu-3000 | Ama-gradients amaningi omthamo ayatholakala, afanele izidingo ezahlukene zesigaba samandla |
Indlela Yokukhetha Yezinyathelo Ezintathu:
Isinyathelo 1: Khetha isilinganiso se-voltage yokumelana ngokusekelwe ku-voltage yebhasi bese uvumela i-margin yokwehla (isb., 450–500V).
Isinyathelo 2: Khetha incazelo yempilo yesevisi ngokusekelwe ekushiseni okuzungezile kanye nomklamo wokushisa (isb., 105℃/3000h) bese uhlola ukwenyuka kwezinga lokushisa.
Isinyathelo 3: Qondanisa ubukhulu ngokuya ngemingcele yokuphakama/ububanzi besikhala (isb., Φ30×70mm) bese uqinisekisa umugqa wamanzi ogelezayo kanye nencazelo ye-ESR.
Isikhathi sokuthunyelwe: Jan-26-2026